By Topic

Crystallinity-retaining removal of germanium by direct-write focused electron beam induced etching

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Roediger, Peter ; Vienna University of Technology, Floragasse 7/1, A-1040 Vienna, Austria ; Wanzenboeck, Heinz D. ; Hochleitner, Gottfried ; Bertagnolli, Emmerich

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3596563 

In this work, a well-controllable, direct-write, resistless, and crystallinity-retaining etching process for germanium using a focused electron beam with nanometer resolution has been developed. This process allows for precise, local, and efficient removal of germanium from a surface without showing any spontaneous etching effects. This focused electron beam induced etching process of germanium substrates employs pure chlorine gas as etchant. The presented process was carried out in a conventional scanning electron microscope equipped with a custom-tailored gas injection system. The etch rate of this etching process was observed to be up to 0.32 μm3min-1 or 12 nmmin-1 for an area of 1.5×1.5 μm2. The influence of various etching parameters such as electron beam current, acceleration voltage and chlorine gas flow on the etch rate as well as the shape of the etch pits have been studied systematically by atomic force microscopy analysis. It is demonstrated that etching of amorphous germanium films can be performed significantly faster (∼8 times) than etching of crystalline germanium. Finally, a comparison between silicon etching and germanium etching by chlorine is presented.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:29 ,  Issue: 4 )