Referenced Items are not available for this document.
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3596817
Magnetic tunnel junctions can serve as ultrasensitive low-frequency magnetic sensors, however, their low-frequency performance is limited by low-frequency noise, i.e., 1/f noise. In this paper, we investigate the 1/f noise in MgO magnetic tunnel junctions (MTJs) with a tunneling magnetoresistance (TMR) of 160%, and examine the influence of annealing and MTJ size. The results show that the annealing process can not only dramatically improve the TMR, but can also strongly decrease the MTJ noise. The effect is discussed in terms of the structure of MgO barriers and tunneling probabilities. Increasing the MTJ area to 6400 μm2 yields a voltage spectral density as low as 11 nV/Hz1/2 at 1000 Hz. The possible reasons for the area dependence are discussed.
Published in:
Journal of Applied Physics
(Volume:109
,
Issue:
11
)
Date of Publication: Jun 2011
- Page(s):
- 113917 - 113917-5
- ISSN :
- 0021-8979
- Digital Object Identifier :
- 10.1063/1.3596817
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 13 June 2011
- Issue Date :
- Jun 2011
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
