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Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H–SiC

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12 Author(s)
Dudley, M. ; Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York 11794, USA ; Wu, F. ; Wang, H. ; Byrappa, S.
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Observations have been made, using synchrotron white beam x-ray topography, of stacking faults in 4H–SiC with fault vectors of kind 1/6<2023>. A mechanism has been postulated for their formation which involves overgrowth by a macrostep of the surface outcrop of a c-axis threading screw dislocation, with two c/2-height surface spiral steps, which has several threading dislocations of Burgers vector c+a, with c-height spiral steps, which protrude onto the terrace in between the c/2-risers. Such overgrowth processes deflect the threading dislocations onto the basal plane, enabling them to exit the crystal and thereby providing a mechanism to lower their densities.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 23 )

Date of Publication:

Jun 2011

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