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A physical model for bipolar oxide-based resistive switching memory based on ion-transport-recombination effect

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5 Author(s)
Bin Gao ; Institute of Microelectronics, Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Peking University, Beijing 100871, People''s Republic of China ; Jinfeng Kang ; Lifeng Liu ; Xiaoyan Liu
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3599490 

A physical model based on ion-transport-recombination effect is proposed to quantify the RESET behavior of bipolar metal-oxide-based resistive random access memory devices. In the model, RESET process is attributed to the recombination of mobile oxygen ions with low-electron-occupied oxygen vacancies, which causes the rupture of conductive filaments consisted of oxygen vacancies. Ion transport equations are introduced to quantitatively investigate the switching characteristics such as RESET speed and endurance. The proposed model was verified by the fabricated ZnO-based devices.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 23 )

Date of Publication:

Jun 2011

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