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Polycrystalline CdTe thick films were grown by MBE technique with thicknesses up to 220 μm and growth rates up to 10 μm/h. The growth was performed on both, thermally oxidized silicon wafers and the Medipix2 ASIC. We determined the mostly promising growth temperatures and show that the growth process is suitable to the Medipix2 readout electronics. For the first time, X-ray images with directly deposited CdTe were obtained. These first images show a high spatial resolution, demonstrating the high potential of future application of CdTe sensor films, directly deposited on readout-electronics. The detector properties of the films are characterized by electrical measurements and detector measurements.