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Indium-gallium-zinc-oxide based mechanically flexible transimpedance amplifier

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5 Author(s)
C. Zysset ; Electronics Institute, Swiss Federal Institute of Technology Zurich ; N. S. Munzenrieder ; T. Kinkeldei ; K. H. Cherenack
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A mechanically flexible amorphous indium-gallium-zinc-oxide (a-IGZO) based transimpedance amplifier is demonstrated. The circuit consists of an a-IGZO thin-film transistor (TFT) and two resistors made of a-IGZO TFTs, integrated on a 50 m-thick Kapton substrate. A transimpedance (current-to-voltage) gain of 86.5 dB and a cutoff frequency of 8.38 kHz are measured at a supply voltage of 5 V. The mechanical flexibility of the transimpedance amplifier is tested by bending the circuit to radii of 10 and 5 mm generating tensile strains of 0.3 and 0.5 , respectively. Bending the circuit to a radius of 5 mm decreases the gain by 1 dB and increases the cutoff frequency by 1.45 kHz. The decreased gain is due to the increased electron mobility in the a-IGZO devices caused by the strain.

Published in:

Electronics Letters  (Volume:47 ,  Issue: 12 )