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Recent Progress of Phase Change Memory (PCM) and Resistive Switching Random Access Memory (RRAM)

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8 Author(s)
Wong, H.-S.P. ; Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA ; SangBum Kim ; Byoungil Lee ; Caldwell, M.A.
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The increasing demand for high-capacity non volatile memories in the electronic portable and media applications has required continuous scaling of the conventional FLASH memory technology beyond perceived limits. At the same time, system designers envision the use of novel memory technology may revolutionalize the organization of the memory hierarchy of processors and the design of SoC and SiP. This has resulted in the exploration of many alternate memory technologies like PCM, RRAM, STTRAM. In this paper we discuss some of our recent works on understanding the various aspects of PCM and RRAM.

Published in:

Memory Workshop (IMW), 2011 3rd IEEE International

Date of Conference:

22-25 May 2011