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A Single-Temperature Trimming Technique for MOS-Input Operational Amplifiers Achieving 0.33 \mu V/ ^{\circ} C Offset Drift

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5 Author(s)
Bolatkale, M. ; Delft Univ. of Technol., Delft, Netherlands ; Pertijs, M.A.P. ; Kindt, W.J. ; Huijsing, J.H.
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A MOS-input operational amplifier has a reconfigurable input stage that enables trimming of both offset and offset drift based only on single-temperature measurements. The input stage consists of a MOS differential pair, whose offset drift is predicted from offset voltage measurements made at well-defined bias currents. A theoretical motivation for this approach is presented and validated experimentally by characterizing the offset of pairs of discrete MOS transistors as a function of bias current and temperature. An opamp using the proposed single-temperature trimming technique has been designed and fabricated in a 0.5 μm BiCMOS process. After single-temperature trimming, it achieves a maximum offset of ± 30 μV and an offset drift of 0.33 μV/°C (3σ) over the temperature range of -40°C to +125°C.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:46 ,  Issue: 9 )

Date of Publication:

Sept. 2011

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