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Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors

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4 Author(s)
Hee-Dong Kim ; Sch. of Electr. Eng., Korea Univ., Seoul, South Korea ; An, Ho-Myoung ; Yujeong Seo ; Geun Kim, Tae

This letter covers the fabrication of a transparent resistive random access memory (T-ReRAM) device using ITO/AlN/ITO capacitors and its observed resistive switching characteristics. This AIN-based T-ReRAM shows a transmittance above 80% (including the substrate) in the visible region and an excellent switching behavior under ±3 V/10 ns with a high-to-low resistance ratio greater than 102. In the reliability test, the device showed an endurance of >; 108 cycles and a retention time of >; 105 s at 85°C. We believe that the AIN-based T-ReRAM presented in this letter could be a milestone for future see-through electronic devices.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 8 )