By Topic

Impact of Graphene Interface Quality on Contact Resistance and RF Device Performance

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Hsu, Allen ; Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA ; Wang, Han ; Ki Kang Kim ; Kong, Jing
more authors

This letter demonstrates the importance of the graphene/metal interface on the ohmic contacts of high-frequency graphene transistors grown by chemical vapor deposition (CVD) on copper. Using an Al sacrificial layer during ohmic lithography, the graphene surface roughness underneath the ohmic contacts is reduced by fourfold, resulting in an improvement in the contact resistance from 2.0 to 0.2-0.5 kΩ·μm. Using this technology, top-gated CVD graphene transistors achieved direct-current transconductances of 200 mS/mm, maximum on current densities in excess of 1000 mA/mm, and hole mobilities ~ 1500-3000 cm2/(V·s) on silicon substrates. Radio-frequency device performance yielded an extrinsic current-gain cutoff frequency fT of 12 GHz after pad capacitance de-embedding resulting in an fT - LG product of 24 GHz·μm.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 8 )