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Dual-band GaN HEMT power amplifier using resonators in matching networks

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2 Author(s)
Zhebin Wang ; Electr. Eng., Univ. of Quebec in Rimouski, Rimouski, QC, Canada ; Chan-Wang Park

In this paper, we employ a novel method by using resonators with microstrip lines to design a dual-band GaN HEMT power amplifier. At both input and output matching networks, we add parallel resonators between series microstrip lines and open-circuited stubs to realize the dual-band operation. With our proposed structure, we can use the conventional L-type structure to design matching network for each operation frequency so that the design is easier. By using just one transistor without any tunable electronic element or switch, a novel dual-band class AB power amplifier working at 1.5 GHz and 2.4 GHz is designed and fabricated to demonstrate our proposed simple method. With dual-band matching networks using resonators, the experimental results show the output power 40.3 dBm and 39.05 dBm with power added efficiency (PAE) 55.63% and 40.25% at 1.5 GHz and 2.4 GHz, respectively.

Published in:

Wireless and Microwave Technology Conference (WAMICON), 2011 IEEE 12th Annual

Date of Conference:

18-19 April 2011