Referenced Items are not available for this document.
A full-fledged surface potential based compact model for cylindrical gate transistors replete with physical effects such as polysilicon gate depletion, mobility degradation, quantum mechanical effects, short channel effects, leakage currents, and parasitic resistances and capacitances etc. is presented. For the first time we present calibration results of such a model to a cylindrical gate technology that exhibits asymmetric i-v characteristics.
Published in:
VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
Date of Conference: 25-27 April 2011
- Page(s):
- 1 - 2
- ISSN :
- 1930-8868
- Print ISBN:
- 978-1-4244-8493-5
- INSPEC Accession Number:
- 12047905
- Conference Location :
- Hsinchu
- Digital Object Identifier :
- 10.1109/VTSA.2011.5872259
- Product Type:
- Conference Publications
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