By Topic

A study on abrupt switching phenomena of independent double-gated poly-Si nanowire transistors under cryogenic operation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Zerming Lin ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Wei-Chen Chen ; Horng-Chih Lin ; Tiao-Yuan Huang

The origin of abrupt turn-on characteristics observed in an independent double-gate NW transistor at cryogenic ambient is studied in this paper. It is found that the occurrence of this behavior is greatly influenced by L, T, and drain bias. A model taking into account the dopant distribution of an implanted gate is proposed to interpret our findings. It suggests that the non-intentionally formed barriers at the channel edge give rise to carrier trapping effects until an adequately large gate voltage is applied to lower the magnitude of the barriers for the trapped electrons to flow to the drain.

Published in:

VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on

Date of Conference:

25-27 April 2011