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Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes

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11 Author(s)
Wang, C.H. ; Dept. of Photonics & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Lin, D.W. ; Lee, C.Y. ; Tsai, M.A.
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The efficiency and electrical characteristics of GaN-based high-voltage light-emitting diodes (HV-LEDs) are investigated in detail. The spatial distribution of light output and simulation results showed that 100-V HV-LED with smaller microchips had superior current spreading. As a result, under 1-W operation, the luminous efficiency of 100-V HV-LED with smaller microchips was enhanced by 7.8% compared to that of 50-V HV-LED, while the efficiency droop behaviors were reduced from 28% in 50-V HV-LED to 25.8% in 100-V HV-LED. Moreover, smaller microchips exhibited lower series resistance and forward voltage, leading to higher wall-plug efficiency.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 8 )