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Performance of Localized-SOI MOS Devices on (110) Substrates: Impact of Channel Direction

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14 Author(s)
Huguenin, J.-L. ; STMicroelectronics, Crolles, France ; Monfray, S. ; Hartmann, J. ; Destefanis, V.
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In this letter, we demonstrate the optimization of localized silicon-on-insulator and the functionality of devices on (110) silicon substrates. The influence of several channel directions (i.e., 15 °, 30° , 45°, and 60 ° away from the [001] direction) on both hole mobility and electron mobility has been investigated. Finally, the electrical characteristics of 55-nm-gate-length n-channel and p-channel metal-oxide-semiconductor transistors are presented, showing a good subthreshold behavior and confirming the interest of (110) ultrathin body/box devices for low-power applications.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 8 )