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Rapid Thermal Treatment for Improving Thermal Processing Stability of Ar-Implanted Surface Passivated High-Resistivity Silicon

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3 Author(s)
Chih-Yi Liu ; Dept. of Electron. Eng., Nat. Kaohsiung Univ. of Appl. Sci., Kaohsiung, Taiwan ; Min-Hang Weng ; Jyun-Min Lin

This study improved the thermal processing stability of Si-based coplanar waveguides (CPW) through Ar ion implantation with rapid thermal annealing (RTA). Ar ion implantation damaged the surface layer of the high-resistivity silicon substrate, which decreased attenuation of the CPW line. However, the damaged layer recrystallized during a high temperature process, which caused thermal processing instability. A RTA process was performed to retard the epitaxial regrowth from the substrate, this improved thermal processing stability and decreased dc-voltage dependence of the attenuation of the CPW line. These improved properties were found to be due to the RTA process retaining more bulk traps within the damaged layer.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:21 ,  Issue: 7 )

Date of Publication:

July 2011

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