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Epitaxial growth of the high temperature ferromagnetic semiconductor Fe1.5Ti0.5O3 on silicon-compatible substrate

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7 Author(s)
Hamie, Ali ; Groupe d’Etude de la Matière Condensée (GEMaC), CNRS-UVSQ, 78035 Versailles, France ; Popova, Elena ; Dumont, Yves ; Chikoidze, Ekaterina
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The ilmenite-hematite (IH) solid solution Fe1.5Ti0.5O3 thin films with rhombohedral symmetry were epitaxially grown on silicon-compatible cubic SrTiO3(001) substrates. Ordered (R-3 symmetry) and disordered (R-3c symmetry) cation arrangement along the film c axis was obtained for different oxygen pressure during the IH growth. Drastic changes in magnetic properties of the films were observed as a function of the cation order. The IH thin films with R-3 symmetry have relatively high conductivity and saturation magnetization at 300 K (6 Ω-1cm-1 and 0.4 μB/Fe respectively), and Curie temperature of 415 K, making IH a promising material for room-temperature spintronics applications.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 23 )

Date of Publication:

Jun 2011

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