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Simulation of the Electron Transport in a Mott Diode by the Monte Carlo Method

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4 Author(s)
Obolensky, S.V. ; N.I. Lobachevsky State Univ. of Nizhny Novgorod, Nizhny Novgorod, Russia ; Murel, A.V. ; Vostokov, N.V. ; Shashkin, V.I.

The electron-transport processes in a low-barrier Mott diode are studied by the methods of numerical simulation. The effects related to the quasi-ballistic motion of electrons are examined. The I-V characteristics of the diode are obtained. We have performed a comparative analysis of the results of the simulation, which was carried out using different approaches: the Monte Carlo method and the local-field model. The calculated I-V characteristics are compared with the experimental dependence. The applicability limits of the approaches we used are analyzed.

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Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 8 )