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Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate

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4 Author(s)
Medjdoub, F. ; Institute of Electronics, Microelectronics and Nanotechnology (IEMN)–CNRS, Av. Poincaré, 59652 Villeneuve d''Ascq, France ; Zegaoui, M. ; Rolland, N. ; Rolland, P.A.

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High quality AlN/GaN heterostructures grown on silicon substrate are demonstrated. It is found that high carrier concentration can be achieved whereas circular diodes showed a low leakage current up to 200 V reverse bias. 200 nm gate length AlN/GaN transistors exhibited a drain current density of 1.3 A/mm with a pinchoff leakage current below 20 μA/mm and a record GaN-on-silicon extrinsic transconductance of 470 mS/mm. These results demonstrate the possibility to achieve a unique combination of large polarization with a barrier thickness as low as 3 nm while preserving a remarkably low device leakage current without using any gate insulator.

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Applied Physics Letters  (Volume:98 ,  Issue: 22 )