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High performance strained-layer InGaAs quantum well lasers grown on a (311)A GaAs substrate

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8 Author(s)
M. Takahashi ; ATR Opt. & Radio Commun. Res. Labs., Kyoto, Japan ; P. Vaccaro ; I. Fujita ; T. Watanabe
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Summary form only given. In this paper we present the photoluminescence (PL) spectrum and time-resolved PL spectrum of (311)- and (100)-oriented SLQWs, and the characteristics of (311)-oriented InGaAs/GaAs GRIN-SCH SLQW lasers. To the best of our knowledge, this is the first room temperature operation of low threshold-current density and high power InGaAs QW lasers grown on (311)A GaAs substrates

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE  (Volume:1 )

Date of Conference:

31 Oct-3 Nov 1994