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Ultra-low threshold 1.3 μm strained-layer quantum well lasers for interconnection

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2 Author(s)
Wakao, K. ; Fujitsu Labs. Ltd., Atsugi, Japan ; Imai, H.

Ultra-low threshold InGaAsP/InGaAsP strained-layer MQW lasers emitting at 1.3 μm and their zero-bias modulation characteristics are described. These low threshold lasers are promising as high-speed light sources for optical interconnections

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE  (Volume:2 )

Date of Conference:

31 Oct-3 Nov 1994