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Materials properties of B-doped Si by low energy plasma source ion implantation

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7 Author(s)
Matyi, R.J. ; Dept. of Mater. Sci. & Eng., Wisconsin Univ., Madison, WI, USA ; Brunco, D.P. ; Felch, S.B. ; Ishida, E.
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We have performed an analysis of the structural characteristics of silicon following low-energy (3.5 kV) by plasma source ion implantation from a BF3 plasma and postimplant rapid thermal annealing. Cross-sectional high resolution transmission electron microscopy imaging has shown that in the as-implanted silicon the first 5 nm is amorphous; no evidence of dislocations or other extended defects was observed. Rutherford backscattering channeling spectra suggest a similar result. High resolution x-ray diffraction analyses revealed a continuous change in the stress in the implanted layer that ranged from highly compressive in the as-implanted Si to moderately tensile in fully annealed samples. All results show that low energy PSII avoids the formation of extended defects and maintain excellent structural quality following annealing

Published in:

Ion Implantation Technology. Proceedings of the 11th International Conference on

Date of Conference:

16-21 Jun 1996

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