Cart (Loading....) | Create Account
Close category search window

Materials properties of B-doped Si by low energy plasma source ion implantation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Matyi, R.J. ; Dept. of Mater. Sci. & Eng., Wisconsin Univ., Madison, WI, USA ; Brunco, D.P. ; Felch, S.B. ; Ishida, E.
more authors

We have performed an analysis of the structural characteristics of silicon following low-energy (3.5 kV) by plasma source ion implantation from a BF3 plasma and postimplant rapid thermal annealing. Cross-sectional high resolution transmission electron microscopy imaging has shown that in the as-implanted silicon the first 5 nm is amorphous; no evidence of dislocations or other extended defects was observed. Rutherford backscattering channeling spectra suggest a similar result. High resolution x-ray diffraction analyses revealed a continuous change in the stress in the implanted layer that ranged from highly compressive in the as-implanted Si to moderately tensile in fully annealed samples. All results show that low energy PSII avoids the formation of extended defects and maintain excellent structural quality following annealing

Published in:

Ion Implantation Technology. Proceedings of the 11th International Conference on

Date of Conference:

16-21 Jun 1996

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.