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GaAs IC's fabricated with the high-performance, high-yield multifunction self-aligned gate process for radar and EW applications

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8 Author(s)
Bahl, I.J. ; ITT Gallium Arsenide Technol. Center, Roanoke, VA, USA ; Willems, David A. ; Naber, J.F. ; Singh, H.P.
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Design and test results are presented for several multiuse GaAs ICs for radar and electronic warfare (EW) applications. The chips described are a redundant switch, a broadband distributed amplifier, a broadband variable-gain amplifier, a 2.5-GHz sample and hold, a 1-GHz analog-to-digital converter, and an L-band buffered prescalar. These ICs, fabricated with the ITT 0.4-μm-gate MESFET multifunction self-aligned gate (MSAG) process, demonstrate excellent performance

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:38 ,  Issue: 9 )