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Fluorine effects in BF2+ implants at various energies

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5 Author(s)
S. B. Felch ; Varian Res. Center, Palo Alto, CA, USA ; B. S. Lee ; D. F. Downey ; Z. Zhao
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The effects of fluorine co-implanted with boron in BF2 + implants at conventional energies (50-80 keV) are well-known. These effects include the pile-up of fluorine in regions of residual damage near the boron peak, the amorphous/crystalline interface, and the end of range, and the formation of fluorine bubbles after annealing. However, ultra-low energy BF2+ implants (below 5 keV) and plasma-doped samples do not show any of these effects. In order to identify the transition where the fluorine effects disappear, a series of BF2+ implants at energies ranging from 2 to 50 keV and doses of 5×1014 to 5×1015 cm-2 were performed. The implants were rapidly annealed at temperatures of 900-1000°C for 30 s and then analyzed using SIMS and TEM. The results suggest a dependency of these undesirable fluorine effects on ion energy, implant dose, and anneal temperature

Published in:

Ion Implantation Technology. Proceedings of the 11th International Conference on

Date of Conference:

16-21 Jun 1996