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A 256m Dram With Simplified Register Control For Low Power Self Refresh And Rapid Burn-in

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14 Author(s)
Seung-Moon Yoo ; Product Development Center, Memory Devices Business, Samsung Electronics Co. ; Jin Man Han ; Ejaz Haq ; Sei Seung Yoon
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First Page of the Article

Published in:

VLSI Circuits, 1994. Digest of Technical Papers., 1994 Symposium on

Date of Conference:

9-11 June 1994