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In-line detection of radial non-uniformity of VT-adjust implants in 200 mm wafers using Hg-probe C-V carrier depth profiling

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3 Author(s)
Weinzierl, S.R. ; Solid State Measurements Inc., Pittsburgh, PA, USA ; Hillard, R.J. ; Gruber, G.A.

Variations in VT-adjust implant dose from the center to edge of 200 mm wafers are investigated for both furnace and rapid thermal anneals using highly accurate in-line Hg-probe pulsed C-V measurements. Solid-state diffusion theory is used to verify the observed differences

Published in:

Ion Implantation Technology. Proceedings of the 11th International Conference on

Date of Conference:

16-21 Jun 1996

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