In-line detection of radial non-uniformity of V/sub T/-adjust implants in 200 mm wafers using Hg-probe C-V carrier depth profiling

Variations in V/sub T/-adjust implant dose from the center to edge of 200 mm wafers are investigated for both furnace and rapid thermal anneals using highly accurate in-line Hg-probe pulsed C-V measurements. Solid-state diffusion theory is used to verify the observed differences.