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Energy contamination from multiple-charged ion implantation in conventional implanter

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7 Author(s)
Kubo, T. ; Div. of Profcess Dev., Fujitsu Labs. Ltd., Kawasaki, Japan ; Hisaeda, T. ; Miyake, T. ; Ishigaki, T.
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We studied the energy contamination (EC) in multiple-charged ion implantation with conventional implanters. The presence of the EC of low energy ions caused by the charge exchange with the outgassing molecules from photoresist is a serious problem. We evaluated the dose and energy of the EC using the SIMS analysis. The dose of EC reaches 12% of the P ++ dose for a beam current of 400 pμA. When the beamline pressure is improved by reducing the beam current to 200 pμA the amount of EC decreases to 5%. The ratio of EC to P++ dose has a good linearity with the beamline pressure. We examined the influence of EC on the device characteristic for several type of structures when a retrograded n-well is formed by P++ implantation. In the case of 0.25 μm PMOS surface channel transistors, a shift in the threshold voltage is suppressed to less than 1% when REC is 5%

Published in:

Ion Implantation Technology. Proceedings of the 11th International Conference on

Date of Conference:

16-21 Jun 1996

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