Referenced Items are not available for this document.
In this paper, the results obtained with limited area amorphization by argon ion-implantation at the periphery of 6H-SiC Schottky barrier diodes are reported. It is demonstrated that only 50 μm of implant region is required at the periphery to obtain ideal plane parallel breakdown voltages. The leakage current at small reverse bias voltages was found to be directly proportional to the implant area
Published in:
Electron Devices, IEEE Transactions on
(Volume:44
,
Issue:
6
)
Date of Publication: Jun 1997
- Page(s):
- 1013 - 1017
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 5587761
- Digital Object Identifier :
- 10.1109/16.585559
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jun 1997
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
