By Topic

A physics-based, dynamic thermal impedance model for SOI MOSFET's

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Brodsky, J.S. ; Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA ; Fox, R.M. ; Zweidinger, D.T. ; Veeraraghavan, S.

A physics-based compact analytical expression for the thermal impedance of SOI MOSFET's is presented. This new model extends the steady-state thermal model of Goodson and Flik (1992) to allow for transient and ac analyses, while improving self-consistency for large devices. The modified steady-state model compares favorably to measurements. Using the software package Thermal Impedance Pre-Processor (TIPP), a multiple-pole circuit can be fitted to the thermal-impedance model. The new model is compared to three-dimensional (3-D) ANSYS transient simulations with good results. The thermal-equivalent circuit is used in conjunction with a modified version of SOISPICE to give efficient electrothermal simulations in the dc and transient regimes

Published in:

Electron Devices, IEEE Transactions on  (Volume:44 ,  Issue: 6 )