By Topic

The effect of externally imposed mechanical stress on the hot-carrier-induced degradation of deep-sub micron nMOSFET's

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Degraeve, R. ; Interuniversitair Microelectron. Center, Leuven, Belgium ; Groeseneken, G. ; De Wolf, I. ; Maes, H.E.

The influence of externally imposed mechanical stress (MS) on the hot-carrier-induced degradation of MOSFET's is studied. For nMOSFET's, tensile (compressive) stress increases (decreases) degradation. This effect is ascribed to the piezoresistance effect which causes a change of the hot-carrier generation. It is demonstrated that, in contradiction with earlier reports in literature, externally imposed mechanical stress has no influence on carrier trapping, nor on interface trap creation. Also, since the piezoresistance coefficient is reduced in deep-sub micron transistors, the effect of mechanical stress on hot-carrier degradation becomes negligible for 0.35-μm transistors

Published in:

Electron Devices, IEEE Transactions on  (Volume:44 ,  Issue: 6 )