By Topic

Effects of carrier transport on the L-I characteristics of QW lasers in the presence of spatial hole burning

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Alam, M.A. ; Lucent Lab., AT&T Bell Labs., Murray Hill, NJ, USA

In this paper, we study the effects of carrier transport and carrier capture on the linearity of the light-current characteristics of a semiconductor laser using an analytically solvable model. We include various physical processes within the model and study how they affect laser linearity. The technique used shows how to integrate the photon and electron transport within a single model, and the conclusions reveal some interesting aspects of semiconductor laser characteristics

Published in:

Quantum Electronics, IEEE Journal of  (Volume:33 ,  Issue: 6 )