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Room temperature operation of a quantum-dot flash memory

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5 Author(s)
Welser, J.J. ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Tiwari, S. ; Rishton, S. ; Lee, K.Y.
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A flash-memory device has been fabricated and demonstrated at room temperature by coupling a self-aligned, sub-50-nm quantum dot to the channel of a transistor on a silicon-on-insulator (SOI) substrate. Large threshold voltage shifts of up to 0.75 V are obtained for small erase/write voltages (13 V) at room temperature. At 90 K, evidence of single electron storage is observed. The small size of this device is attractive for achieving high packing densities, while the relatively large output current (100 nA-/spl mu/A's), low off-state current (10 pA), and simple fabrication, requiring only minor variations in standard processing, make it suitable for integration with current silicon memory and logic technology.

Published in:

Electron Device Letters, IEEE  (Volume:18 ,  Issue: 6 )

Date of Publication:

June 1997

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