Referenced Items are not available for this document.
Ohmic minority and majority drift mobilities as well as saturation velocities are reported for unstrained and strained Si/sub 1-x/Ge/sub x/ alloys up to z=0.31. The electron-transport model is verified by measurements of the in-plane majority drift mobility in strained Si/sub 1-x/Ge/sub x/ samples for various dopant and Ge concentrations. Saturation velocities are determined by full-band Monte Carlo simulations. There is no substantial decrease in the mobility perpendicular to the Si/SiGe interface for doping concentrations above 10/sup 19/ cm/sup -3/ and growing x. In contrast, the saturation-drift velocity is strongly reduced with x.
Published in:
Electron Device Letters, IEEE
(Volume:18
,
Issue:
6
)
Date of Publication: June 1997
- Page(s):
- 264 - 266
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 5598623
- Digital Object Identifier :
- 10.1109/55.585350
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- June 1997
- Sponsored by :
- IEEE Electron Devices Society
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