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A 1-V high-speed MTCMOS circuit scheme for power-down application circuits

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5 Author(s)
Shigematsu, S. ; High Speed Integrated Circuits Lab., NTT Syst. Electron. Lab., Kanagawa, Japan ; Mutoh, S. ; Matsuya, Y. ; Tanabe, Y.
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This paper proposes a new multithreshold-voltage CMOS circuit (MTCMOS) concept aimed at achieving high-speed, ultralow-power large-scale integrators (LSI's) for battery-driven portable equipment. The “balloon” circuit scheme based on this concept preserves data during the power-down period in which the power supply to the circuit is cut off in order to reduce the standby power. Low-power, high-speed performance is achieved by the small preserving circuit which can be separated from the critical path of the logic circuit. This preserving circuit is not only three times faster than a conventional MTCMOS one, but it consumes half the power and takes up half the area. Using this scheme for an LSI chip, 20-MHz operation at 1.0 V and only a few nA standby current was achieved with 0.5-μm CMOS technology. Moreover, this scheme is effective for high speed and low-power operation in quarter-micrometer and finer devices

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:32 ,  Issue: 6 )