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32 Gbit/s super-dynamic decision IC using 0.13 μm GaAs MESFETs with multilayer-interconnection structure

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4 Author(s)
Otsuji, T. ; NTT Syst. Electron. Lab., Kanagawa, Japan ; Murata, K. ; Tokumitsu, M. ; Sugitani, S.

The authors report on a super-dynamic decision IC using 0.13 μm gate-length GaAs MESFETs. Using a combination of high-speed circuit and device technologies together with a multilayer interconnection structure, 32 Gbit/s decision operation was achieved

Published in:

Electronics Letters  (Volume:33 ,  Issue: 6 )