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Impact of boron penetration on gate oxide reliability and device lifetime in p+-poly PMOSFETs

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6 Author(s)
Kim, B.Y. ; Microelectron. Res. Center, Texas Univ., Austin, TX, USA ; Liu, I.M. ; Luan, H.F. ; Gardner, M.
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The effect of boron penetration on device performance and reliability of p+-poly PMOSFETs was investigated in a wide RTA drive-in temperature range. High RTA drive-in temperature reduces the poly-depletion effect in NMOSFETs while causing significant boron-penetration induced mobility degradation in PMOSFETs, leading to difficulty in Id,sat optimization for a dual-gate CMOS process. Moreover, boron penetration enhances charge trapping in the oxide and interface state generation at the Si-SiO2 interface under F-N stress. The impact of this degradation mode on gate oxide reliability and device lifetime in the PMOSFETs is systematically demonstrated

Published in:

Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International

Date of Conference:

8-10 Apr 1997

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