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Gate stack reliability improvements using controlled ambient processing

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3 Author(s)
Schuegraf, K.F. ; Micron Technol. Inc., Boise, ID, USA ; Thakur, R.P.S. ; Weirner, R.

This paper investigates the impact of ambient control in critical front-end processes. Gate-oxide reliability improvements and device implications for advanced sub-micron applications are described. Such processing limits exposure of wafers to clean-room air and promises reliability improvements, particularly where bare silicon or critical films are present on the wafer surface. Specifically, the benefits of environmental control between gate pre-clean and gate oxidation, gate oxidation and polysilicon deposition, and silicide deposition and annealing are presented

Published in:

Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International

Date of Conference:

8-10 Apr 1997