By Topic

Properties of high quality ZnO films deposited by an RF magnetron mode electron cyclotron resonance (ECR) sputtering system

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
M. Kadota ; Murata Manuf. Co. Ltd., Kyoto, Japan ; M. Minakata

The properties of ZnO film deposited by an RF-magnetron-mode ECR sputtering system, which has added magnets to the outside of a cylindrical zinc metal (Zn) target of the RF-mode ECR sputtering system reported previously, are investigated. The ZnO film on the glass substrate deposited by this system was capable of driving a 1.3 GHz fundamental Rayleigh SAW for the first time. These films exhibit almost the same effective electromechanical coupling factors (k(eff)) as the theoretical k(eff) values calculated by finite element method (FEM) using the constants of ZnO single crystal and lower insertion loss in comparison with the films deposited by the DC-mode ECR and the RF-mode ECR. The ZnO film on R-plane sapphire deposited by this system shows a (112¯0) plane epitaxial ZnO film, which is capable of driving a 2.54 GHz Sezawa wave. By measuring a photoluminescence of a thin epitaxial ZnO film with thickness of 1.2 μm, free excitons are observed for the first time

Published in:

Ultrasonics Symposium, 1996. Proceedings., 1996 IEEE  (Volume:1 )

Date of Conference:

3-6 Nov 1996