Referenced Items are not available for this document.
We have studied the influence of the flatness and the relative misorientation of two contacting wafers on the Spreading Resistance profiles obtained in the interfacial region after direct bonding. Both parameters are shown to have a significant influence on the electrical properties of the structure. Plan-view Transmission Electron Microscopy examination of the interfaces suggests that this influence may take its origin from dislocation-related electrically active defects
Published in:
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Date of Conference: 31 May-3 Jun 1994
- Page(s):
- 293 - 296
- Meeting Date :
- 31 May 1994-02 Jun 1994
- ISSN :
- 1063-6854
- Print ISBN:
- 0-7803-1494-8
- INSPEC Accession Number:
- 4922957
- Conference Location :
- Davos
- Digital Object Identifier :
- 10.1109/ISPSD.1994.583746
- Product Type:
- Conference Publications
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