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Comments on `A compact thermal noise model for the investigation of soft error rates in MOS VLSI digital circuits'

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2 Author(s)
Kolodziejski, J.F. ; Inst. of Electron. Technol., Warsaw, Poland ; Spiralski, L.

For the original article see ibid., vol.24, no.1, p.78-89 (1989). In the above-title paper by P.D. Layman and S.G. Chamberlain, the mean-square noise voltage of a MOSFET transistor was determined in the frequency range Δf=2.2/(2πtsen)=0.35(1/t sen), whereas the mean-square value (and consequently the RMS) of thermal noise in the RC circuit was determined over an infinite frequency range. The commenter examines the implications of this approach to draw attention to a few questions that can significantly influence the accuracy of results in the course of consideration of noise in electronic circuits

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:25 ,  Issue: 4 )

Date of Publication:

Aug 1990

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