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Depth and width measurement simulation of semiconductor trench by optical wave irradiation

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1 Author(s)
Shirasaki, L. ; Tamagawa Univ., Machida, Japan

The scattering properties by two dimensional Gaussian beam irradiation to a semiconductor square trench are analyzed by the boundary element method. Then, the scattering properties depending on differences of polarization of light, the permittivity and so on, and the limit of the trench width and depth measurements are investigated numerically

Published in:

Magnetics, IEEE Transactions on  (Volume:33 ,  Issue: 2 )

Date of Publication:

Mar 1997

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