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Self-consistent simulation of a high-power 73 GHz integrated IMPATT oscillator

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5 Author(s)
Anzill, W. ; Tech. Univ., Munchen, Germany ; Goeller, T. ; Kaertner, F.X. ; Russer, P.
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A quasistatic IMPATT diode model for fast time domain oscillator simulations is applied to the simulation of an integrated double drift diode IMPATT oscillator. Comparison with measurements yields agreement within 7 GHz in oscillation frequency and 20 mW in output power over the measured range of DC bias currents.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 20 )

Date of Publication:

27 Sept. 1990

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