By Topic

Sensor based on a MOS transistor for applications in scanning force microscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
T. Akiyama ; Inst. of Microtechnol., Neuchatel Univ., Switzerland ; A. Tonin ; H. R. Hidber ; J. Brugger
more authors

In this article an integrated force sensor based on a stress-sensing MOS transistor is introduced for applications in scanning force microscopy (SFM). The sensor configuration will be described, and theoretical and experimental investigations of the sensitivity will be presented. With the fabrication process, consisting of a standard CMOS-process and post-processing (conventional silicon bulk micromachining), cantilevers with MOS transistors integrated at the base for deflection detection were fabricated. Furthermore, Pt-tips were grown on some of the cantilevers by using focused ion beam (FIB) deposition techniques. The cantilevers have typically a spring constant of 1 N/m, and are 400 to 950 μm in length, and have a mechanical resonance frequency between 6.2 and 35 kHz. It was found that the stress sensitivity of the MOS transistor changed depending on gate voltage, while being independent of the drain voltage. The cantilevers were successfully used for SFM-imaging in contact-mode. The resolution is noise limited to a few nanometer in the contact-mode, while atomic resolution is expected to be feasible in the dynamic-mode. These cantilevers together with integrated circuits are expected to be well suited for mass production because of their CMOS processing compatibility

Published in:

Micro Electro Mechanical Systems, 1997. MEMS '97, Proceedings, IEEE., Tenth Annual International Workshop on

Date of Conference:

26-30 Jan 1997