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Room temperature continuous wave operation of GaInP/AlInP visible-light laser with GaInP/AlInP superlattice confinement layer grown by gas source molecular beam epitaxy

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4 Author(s)
Kikuchi, A. ; Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan ; Kaneko, Y. ; Nomura, I. ; Kishino, K.

A remarkable threshold current density reduction (from 3.5 kA/cm2 to 1.6 kA/cm2) of GaInP/AlInP visible light lasers grown by gas source molecular beam epitaxy (GS-MBE) was obtained by introducing 50 pairs of GaInP(7.1 AA)/AlInP(7.1 AA) short period superlattice confinement (SLC) layers. As a result, the room temperature continuous wave (CW) operation was obtained at 669 nm with a minimum threshold current of 50 mA and maximum light output of 10.5 mW.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 20 )

Date of Publication:

27 Sept. 1990

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