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High speed electron-beam testing of VLSI circuits by backscattered electron detection

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1 Author(s)
A. Khursheed ; Dept. of Electr. Eng., Edinburgh Univ., UK

A scheme which is predicted to increase the time resolution of electron beam testers by more than an order of magnitude to a value of around 400 fs is described. The new proposal is based on using multi-channel angular backscattered detection which can be used in conjunction with the normal operating mode of electron beam testers.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 20 )