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CMOS device with self-aligned source/drain using amorphous silicon local interconnection layer

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3 Author(s)
Yong-Sun Yoon ; Electron. & Telecommun. Res. Inst., Taejon, South Korea ; Kyu-Ha Baek ; Kee-Soo Nam

A novel CMOS device, which has a self-aligned source/drain structure using an amorphous silicon local interconnection (ASLI) layer is demonstrated. The proposed device not only has very small areas of source/drain junctions, but also has shallow junction depths much shallower than conventional structures. The capacitance reduction of the source/drain junctions significantly enhances the operating speed

Published in:

Electronics Letters  (Volume:33 ,  Issue: 5 )