By Topic

Temperature-humidity-bias behavior and acceleration factors for nonhermetic uncooled InP-based lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Osenbach, J.W. ; Microelectron., Optoelectron. Center, Lucent Technol., Breinigsville, PA, USA ; Evanosky, T.L. ; Chand, N. ; Comizzoli, R.B.
more authors

The stability of uncooled InP-based laser diodes in humid ambients was studied. Nonhermetic devices were aged at two different temperatures and humidities at a constant current and at one temperature and humidity at six different drive currents. For all nonhermetic devices failure occurred as a result of a large increase in the threshold current. The reverse leakage current for the failures did not increase when the threshold current increased, indicating that the change in threshold was a result of a change in reflectivity of one or both facets. The hermetic control group of devices aged under many of the same conditions showed a gradual increase in both the threshold current and slope efficiency. The median lifetimes as determined by assuming a device was a failure when the threshold current increased by 50% was strongly dependent upon humidity temperature and drive current. The lifetime data was fit to and equation of the form lifetime exp(-Eα/kT) exp(-BRH [RH2]). The values of Eα and BRH were 0.52 eV and 4.9×10-4/%2, respectively. The current drive data was fit to and expression of the form lifetime a exp(IαIop) where Iα as 0.09 h/mA. The lifetime dependence on current drive was modeled by assuming that the drive current caused a local temperature rise through thermal resistance. This local temperature rise then caused a decrease in the local humidity at the diode surface through an expression of the form %RHdiodeα exp (-5990[1/(Tr+Tambient)-1/Tambient ])where where Tr is the local temperature rise due to thermal impedance. Finally, we present our preliminary results on the reliability of nonhermetic SiOx passivated lasers. These results indicate that such lasers can be made with sufficient reliability for use in telecommunications application

Published in:

Lightwave Technology, Journal of  (Volume:15 ,  Issue: 5 )