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The implementation of a reduced-field profile design for high-performance bipolar transistors

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5 Author(s)
Pong-Fei Lu ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Comfort, J.H. ; Tang, D.D. ; Meyerson, B.S.
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The first realization of a reduced-field design concept for advanced bipolar devices using the low-temperature epitaxial (LTE) technique to form the base layer is described. By inserting a lightly doped collector (LDC) spacer layer between the heavily doped base and collector regions, it is successfully demonstrated that the collector-base (CB) junction avalanche multiplication can be reduced substantially while maintaining high collector doping for current density consideration. Similar applications of the LDS technique to the emitter-base (EB) junction also results in a lower electric field, thus less EB junction reverse leakage. The feasibility of the reduced-field profile design concept is demonstrated using a LTE-base device structure.<>

Published in:

Electron Device Letters, IEEE  (Volume:11 ,  Issue: 8 )

Date of Publication:

Aug. 1990

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