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Temperature dependence of threshold voltage in thin-film SOI MOSFETs

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5 Author(s)
G. Groeseneken ; Interuniv. Microelectron. Center, Leuven, Belgium ; J. -P. Colinge ; H. E. Maes ; J. C. Alderman
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A first-order model for the temperature dependence of threshold voltage in thin-film silicon-on-insulator (SOI) n-MOSFETs is described. The temperature dependence of the threshold voltage of thin-film SOI n-channel MOSFETs is analyzed. Threshold voltage variation with temperature is significantly smaller in thin-film (fully depleted) devices than in thick-film SOI and bulk devices. The threshold voltage is shown to be dependent on the depletion level of the device, i.e. whether it is fully depleted or not. There exists a critical temperature below which the device is fully depleted, and above which the device operates in the thick-film regime.<>

Published in:

IEEE Electron Device Letters  (Volume:11 ,  Issue: 8 )