Referenced Items are not available for this document.
Depletion-mode GaInAsP/InP junction field-effect transistors have been fabricated on Fe-doped semi-insulating InP substrates using liquid-phase epitaxial growth techniques. The authors achieved transconductance of 24 mS (160 mS/mm), drain-source saturation current at an on gate bias of 486 mA/mm and current cutoff frequency of 18.8 GHz using a GaInAsP channel layer owing to the gate length reduction
Published in:
Electronics Letters
(Volume:24
,
Issue:
12
)
Date of Publication: 9 Jun 1988
- Page(s):
- 733 - 735
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 3210934
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 9 Jun 1988
- Sponsored by :
- Institution of Engineering and Technology
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